IRF2804

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

Gate Charge (Qg) (Max) @ Vgs : 240 nC @ 10 V

Product Status : Obsolete

Mounting Type : Through Hole

Package : Tube

Input Capacitance (Ciss) (Max) @ Vds : 6450 pF @ 25 V

Series : HEXFET®

Vgs (Max) : ±20V

Vgs(th) (Max) @ Id : 4V @ 250µA

Supplier Device Package : TO-220AB

Rds On (Max) @ Id, Vgs : 2.3mOhm @ 75A, 10V

Mfr : Infineon Technologies

Operating Temperature : -55°C ~ 175°C (TJ)

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Power Dissipation (Max) : 330W (Tc)

Package / Case : TO-220-3

Drain to Source Voltage (Vdss) : 40 V

Current - Continuous Drain (Id) @ 25°C : 75A (Tc)

Technology : MOSFET (Metal Oxide)

FET Feature : -

Description : MOSFET N-CH 40V 75A TO220AB