BSP316PE6327

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

Gate Charge (Qg) (Max) @ Vgs : 6.4 nC @ 10 V

Product Status : Obsolete

Mounting Type : Surface Mount

Package : Tape & Reel (TR) Cut Tape (CT)

Input Capacitance (Ciss) (Max) @ Vds : 146 pF @ 25 V

Series : SIPMOS®

Vgs (Max) : ±20V

Vgs(th) (Max) @ Id : 2V @ 170µA

Supplier Device Package : PG-SOT223-4

Rds On (Max) @ Id, Vgs : 1.8Ohm @ 680mA, 10V

Mfr : Infineon Technologies

Operating Temperature : -55°C ~ 150°C (TJ)

FET Type : P-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Power Dissipation (Max) : 1.8W (Ta)

Package / Case : TO-261-4, TO-261AA

Drain to Source Voltage (Vdss) : 100 V

Current - Continuous Drain (Id) @ 25°C : 680mA (Ta)

Technology : MOSFET (Metal Oxide)

FET Feature : -

Description : MOSFET P-CH 100V 680MA SOT223-4