BSS670S2L

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

Gate Charge (Qg) (Max) @ Vgs : 2.26 nC @ 10 V

Product Status : Obsolete

Mounting Type : Surface Mount

Package : Tape & Reel (TR) Cut Tape (CT)

Input Capacitance (Ciss) (Max) @ Vds : 75 pF @ 25 V

Series : OptiMOS™

Vgs (Max) : ±20V

Vgs(th) (Max) @ Id : 2V @ 2.7µA

Supplier Device Package : PG-SOT23

Rds On (Max) @ Id, Vgs : 650mOhm @ 270mA, 10V

Mfr : Infineon Technologies

Operating Temperature : -55°C ~ 150°C (TJ)

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Power Dissipation (Max) : 360mW (Ta)

Package / Case : TO-236-3, SC-59, SOT-23-3

Drain to Source Voltage (Vdss) : 55 V

Current - Continuous Drain (Id) @ 25°C : 540mA (Ta)

Technology : MOSFET (Metal Oxide)

FET Feature : -

Description : MOSFET N-CH 55V 540MA SOT23-3