SPB80N03S2L-05

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 2V @ 110µA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs : 89.7 nC @ 10 V

Rds On (Max) @ Id, Vgs : 4.9mOhm @ 55A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Package : Tape & Reel (TR)

Drain to Source Voltage (Vdss) : 30 V

Vgs (Max) : ±20V

Product Status : Obsolete

Input Capacitance (Ciss) (Max) @ Vds : 3320 pF @ 25 V

Mounting Type : Surface Mount

Series : OptiMOS™

Supplier Device Package : PG-TO263-3-2

Mfr : Infineon Technologies

Current - Continuous Drain (Id) @ 25°C : 80A (Tc)

Power Dissipation (Max) : 167W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : SPB80N

Description : MOSFET N-CH 30V 80A TO263-3