SPP04N60C3HKSA1

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 3.9V @ 200µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : TO-220-3

Gate Charge (Qg) (Max) @ Vgs : 25 nC @ 10 V

Rds On (Max) @ Id, Vgs : 950mOhm @ 2.8A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 10V

Package : Tube

Drain to Source Voltage (Vdss) : 650 V

Vgs (Max) : ±20V

Product Status : Obsolete

Input Capacitance (Ciss) (Max) @ Vds : 490 pF @ 25 V

Mounting Type : Through Hole

Series : CoolMOS™

Supplier Device Package : PG-TO220-3-1

Mfr : Infineon Technologies

Current - Continuous Drain (Id) @ 25°C : 4.5A (Tc)

Power Dissipation (Max) : 50W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : SPP04N

Description : MOSFET N-CH 650V 4.5A TO220-3