BSP317PE6327

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 2V @ 370µA

Operating Temperature : -55°C ~ 150°C (TJ)

Package / Case : TO-261-4, TO-261AA

Gate Charge (Qg) (Max) @ Vgs : 15.1 nC @ 10 V

Rds On (Max) @ Id, Vgs : 4Ohm @ 430mA, 10V

FET Type : P-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Package : Tape & Reel (TR) Cut Tape (CT)

Drain to Source Voltage (Vdss) : 250 V

Vgs (Max) : ±20V

Product Status : Obsolete

Input Capacitance (Ciss) (Max) @ Vds : 262 pF @ 25 V

Mounting Type : Surface Mount

Series : SIPMOS®

Supplier Device Package : PG-SOT223-4

Mfr : Infineon Technologies

Current - Continuous Drain (Id) @ 25°C : 430mA (Ta)

Power Dissipation (Max) : 1.8W (Ta)

Technology : MOSFET (Metal Oxide)

Base Product Number : BSP317

Description : MOSFET P-CH 250V 430MA SOT223-4