SPU09P06PL

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 2V @ 250µA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : TO-251-3 Short Leads, IPak, TO-251AA

Gate Charge (Qg) (Max) @ Vgs : 21 nC @ 10 V

Rds On (Max) @ Id, Vgs : 250mOhm @ 6.8A, 10V

FET Type : P-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Package : Tube

Drain to Source Voltage (Vdss) : 60 V

Vgs (Max) : ±20V

Product Status : Obsolete

Input Capacitance (Ciss) (Max) @ Vds : 450 pF @ 25 V

Mounting Type : Through Hole

Series : SIPMOS®

Supplier Device Package : P-TO251-3-1

Mfr : Infineon Technologies

Current - Continuous Drain (Id) @ 25°C : 9.7A (Tc)

Power Dissipation (Max) : 42W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : SPU09P

Description : MOSFET P-CH 60V 9.7A TO251-3