IRLR8113

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

Gate Charge (Qg) (Max) @ Vgs : 32 nC @ 4.5 V

Product Status : Obsolete

Mounting Type : Surface Mount

Package : Tube

Input Capacitance (Ciss) (Max) @ Vds : 2920 pF @ 15 V

Series : HEXFET®

Vgs (Max) : ±20V

Vgs(th) (Max) @ Id : 2.25V @ 250µA

Supplier Device Package : D-Pak

Rds On (Max) @ Id, Vgs : 6mOhm @ 15A, 10V

Mfr : Infineon Technologies

Operating Temperature : -55°C ~ 175°C (TJ)

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Power Dissipation (Max) : 89W (Tc)

Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Voltage (Vdss) : 30 V

Current - Continuous Drain (Id) @ 25°C : 94A (Tc)

Technology : MOSFET (Metal Oxide)

FET Feature : -

Description : MOSFET N-CH 30V 94A DPAK