IPP03N03LA

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 2V @ 100µA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : TO-220-3

Gate Charge (Qg) (Max) @ Vgs : 57 nC @ 5 V

Rds On (Max) @ Id, Vgs : 3mOhm @ 55A, 10V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V

Package : Tape & Box (TB)

Drain to Source Voltage (Vdss) : 25 V

Vgs (Max) : ±20V

Product Status : Obsolete

Input Capacitance (Ciss) (Max) @ Vds : 7027 pF @ 15 V

Mounting Type : Through Hole

Series : OptiMOS™

Supplier Device Package : PG-TO220-3

Mfr : Infineon Technologies

Current - Continuous Drain (Id) @ 25°C : 80A (Tc)

Power Dissipation (Max) : 150W (Tc)

Technology : MOSFET (Metal Oxide)

Base Product Number : IPP03N

Description : MOSFET N-CH 25V 80A TO220-3