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Sensor (HK) Limited
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BCR196WH6327

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BCR196WH6327

Category : Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors

Current - Collector (Ic) (Max) : 70 mA

Product Status : Active

Transistor Type : PNP - Pre-Biased

Frequency - Transition : 150 MHz

Mounting Type : Surface Mount

Package : Bulk

Series : -

Vce Saturation (Max) @ Ib, Ic : 300mV @ 500µA, 10mA

Voltage - Collector Emitter Breakdown (Max) : 50 V

Supplier Device Package : PG-SOT323-3

Resistor - Base (R1) : 47 kOhms

Mfr : Infineon Technologies

Resistor - Emitter Base (R2) : 22 kOhms

Current - Collector Cutoff (Max) : 100nA (ICBO)

Power - Max : 250 mW

Package / Case : SC-70, SOT-323

DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 5mA, 5V

Base Product Number : BCR196

Description : BIPOLAR DIGITAL TRANSISTOR

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Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 70 mA 150 MHz 250 mW Surface Mount PG-SOT323-3
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